Method of making a functional device with deposited layers subject to high temperature anneal
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United States of America Patent
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Apr 20, 2004
Grant Date -
May 30, 2002
app pub date -
Mar 7, 2001
filing date -
Nov 25, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.
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