MOSFET device having geometry that permits frequent body contact
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 20, 2004
Grant Date -
Nov 13, 2003
app pub date -
May 10, 2002
filing date -
May 10, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOSFET device design is provided that effectively addresses the problems arising from the parasitic bipolar transistor that is intrinsic to the device. The MOSFET device comprises: (a) a body region; (b) a plurality of body contact regions; (c) a plurality of source regions; (d) a plurality of drain regions; and (d) a gate region. In plan view, the source regions and the drain regions are arranged in orthogonal rows and columns, and at least a portion of the body contact regions are bordered by four of the source and drain regions, preferably two source regions and two drain regions.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully