Method of manufacturing metallic film consisting of giant single crystal grains

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United States of America Patent

PATENT NO 6723186
APP PUB NO 20020015793A1
SERIAL NO

09918296

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Abstract

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A method of manufacturing a metallic film consisting of giant single crystal grains is disclosed. The method includes depositing the metallic film on a substrate under an atmosphere of an inert gas and a specified additive gas to change a surface energy, grain boundary energy, or internal strain energy of the metallic film. The method also includes annealing step of the resultant of the deposition at a temperature suitable for the grain growth of the metallic film containing the additive gases. According to the method, the metallic film consisting of giant single crystal grains having a grain size whose ratio of thickness to an average grain size of the film is above 50 can be produced without depending upon the kind of substrate and deposition method.

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Patent Owner(s)

Patent OwnerAddress
GMEK INCS-112 AAYANG MEGAVALLEY KWANYANG 2-DONG DONGAN-GU ANYANG-SI GYEONGGI-DO 431-767

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ha, Jowoong Seoul, KR 1 7
Kim, Seung Hyun Seoul, KR 142 402
Lee, Dong Su Seoul, KR 52 421
Park, Dong Yeon Seoul, KR 8 143
Woo, Hyun Jung Kyunggi-Do, KR 8 143
Yoon, Eui Joon Seoul, KR 10 184

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