Vapor controlled czochralski (VCZ) single crystal growth apparatus
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United States of America Patent
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Apr 13, 2004
Grant Date -
Oct 10, 2002
app pub date -
Oct 26, 2001
filing date -
Apr 6, 2001
priority date (Note) -
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Abstract
The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.
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