Current source bias circuit with hot carrier injection tracking
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United States of America Patent
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Apr 13, 2004
Issued Date -
N/A
app pub date -
Oct 18, 2000
filing date -
Sep 1, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A current mirror bias circuit for an RF amplifier transistor is modified whereby the reference transistor of the current mirror tracks hot carrier degradation in the RF transistor. Gate bias to the current mirror transistor is modified whereby the drain-to-gate voltage can be positive, and the lightly doped drain region in the lateral n-channel reference transistor is shortened and dopant concentration increased to increase the electric field of the reference transistor to provide the hot carrier injection degradation characteristics similar to the main transistor. Additionally, the gate length of the reference transistor can be shortened to effect the hot carrier injection degradation.
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