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Abstract

A semiconductor device manufacturing apparatus which forms silicon nitride films on a plurality of substrates by thermal chemical vapor deposition. The semiconductor device manufacturing apparatus includes a vertical reaction tube, a substrate holder, and gas supplies. The vertical reaction tube has an inner wall. The substrate holder is for holding the plurality of substrates in the vertical reaction tube with the plurality of substrates being vertically stacked with a distance 'a' between adjacent substrates of the plurality of substrates and a distance 'b' between edges of the plurality of substrates and the inner wall of the vertical reaction tube being maintained substantially equal to each other. The gas supplies supply bis tertiary butyl amino silane and NH.sub.3 into the vertical reaction tube such that the bis tertiary butyl amino silane and the NH.sub.3 flow vertically from one end of the plurality of substrates to an opposing end of the plurality of substrates and do not flow into the vertical reaction tube through the inner wall at a height between the one end and the opposing end of the plurality of substrates, to form the silicon nitride films on the plurality of substrates.

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First Claim