Azo dyes and azo-metal complexes for atomic force microscope lithography

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United States of America Patent

PATENT NO 6716563
APP PUB NO 20030045122A1
SERIAL NO

10214192

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Abstract

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This invention relates to nano-lithography with .pi.-conjugated azo dyes and azo-metal complexes represented by formula 1 or formula 2(Korea Pat. Appln. Nos. 2001-6879.about.6880), which has both electron-donating and electron-accepting groups in the molecular structures, as a resist on Si substrate by using an AFM anodization. lithography. Developing optimum conditions of scan speed, bias voltage, and resist materials are key issues for achieving a high resolution patterning on various substrates. We accomplished nanometer-scale patterning in approximately 35 nm dimensions.

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Patent OwnerAddress
HANYANG HAKWON CO LTD17 HAENGDANG-1 DONG SEONGDONG-RD SEOUL

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Haiwon Seongnam-shi, KR 7 46
Park, Hyeyoung Seongnam-shi, KR 10 246

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