Method of depositing an optical quality silica film by PECVD
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United States of America Patent
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Apr 6, 2004
Grant Date -
Mar 27, 2003
app pub date -
Sep 21, 2001
filing date -
Sep 21, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.
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