Monolithically integrated optically-pumped edge-emitting semiconductor laser
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United States of America Patent
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Mar 30, 2004
Grant Date -
Feb 6, 2003
app pub date -
Nov 16, 2001
filing date -
Jul 31, 2001
priority date (Note) -
Expired
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Abstract
The invention features an edge-emitting semiconductor signal laser having an active region to produce laser light. There is provided a semiconductor pump laser monolithically integrated with the edge-emitting signal laser. The pump laser includes a photon emissive active region to provide photopumping of the active region of the edge-emitting signal laser, thereby providing optical excitation of the active region of the signal laser.
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