Method of producing silica micro-structures from x-ray lithography of SOG materials
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Mar 30, 2004
Grant Date -
N/A
app pub date -
Dec 14, 2001
filing date -
Dec 14, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A lithographic method for producing high aspect ratio silica micro-structures having the steps of: providing a carrier substrate with a confinement boundary placed on the carrier substrate; placing the SOG material within the confinement boundary and soft baking at a temperature above its glass transition temperature; forming a pattern of interest on the soft baked SOG material by x-ray lithography; and heating the SOG material until it is substantially converted to a silica-like oxide.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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LOUISIANA TECH UNIVERSITY FOUNDATION INC | 900 TECH DRIVE RUSTON LA 71270 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Coane, Philip J | Farmerville, LA | 5 | 54 |
# of filed Patents : 5 Total Citations : 54 | |||
Shanmugam, Vijay-Anandh | Sunnyvale, CA | 1 | 1 |
# of filed Patents : 1 Total Citations : 1 | |||
Vasile, Michael J | Albuquerque, NM | 3 | 30 |
# of filed Patents : 3 Total Citations : 30 |
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- 1 Citation Count
- H01L Class
- 1.54 % this patent is cited more than
- 21 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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Feb 28, 2013 | F | Filing |

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