Effective dry etching process of actinide oxides and their mixed oxides in CF4/O2/N2 plasma
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United States of America Patent
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Mar 2, 2004
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app pub date -
Apr 1, 2002
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Jun 15, 1999
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Abstract
A process for gas-phase etching of actinide oxides from a substrate by using plasma power comprising the steps of: a) preheating actinide oxides on the substrate within a process chamber filled with fluorine-containing gas and exposing it to plasma power, and subsequently b) etching actinide oxides from the substrate using a plasma gas-phase reactant system.
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