Field effect transistor having improved withstand voltage
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United States of America Patent
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Feb 24, 2004
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N/A
app pub date -
Oct 12, 2001
filing date -
Apr 5, 2001
priority date (Note) -
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Abstract
A transistor is protected when a high voltage is applied to a drain, without an increase in the capacitance of the drain. A semiconductor device has a gate electrode on a silicon semiconductor substrate on a gate oxide film, and a pair of N.sup.+ -type diffusion regions at a surface of a silicon semiconductor substrate on either side of the gate electrode. An N-type diffusion region in the N.sup.+ -type diffusion region of the drain protrudes to a position deeper in the substrate than the N.sup.+ -type diffusion region.
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