Low voltage protection module
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United States of America Patent
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Feb 24, 2004
Grant Date -
Jan 16, 2003
app pub date -
Sep 5, 2002
filing date -
Mar 1, 1999
priority date (Note) -
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Abstract
A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.
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