Film bulk acoustic resonator with improved lateral mode suppression
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United States of America Patent
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Feb 17, 2004
Grant Date -
Dec 26, 2002
app pub date -
Apr 16, 2002
filing date -
Jun 25, 2001
priority date (Note) -
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Abstract
A film bulk acoustic resonator includes a substrate, a membrane, a piezoelectric layer and a pair of electrodes. The membrane is formed on the substrate to form an air gap. The piezoelectric layer is formed on the membrane. The electrodes are formed on both surfaces of the piezoelectric layer to partially overlap each other. All the sides of the piezoelectric layer and the electrodes are curved.
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