Method for evaluating the quality of a semiconductor substrate
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United States of America Patent
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Feb 17, 2004
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app pub date -
Nov 19, 2002
filing date -
Sep 8, 2000
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Abstract
A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time .tau. of the semiconductor substrate from an expression '.tau.=T/C', where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.
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