Method for cleaning the contact area of a metal line
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United States of America Patent
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Feb 17, 2004
Grant Date -
Apr 10, 2003
app pub date -
Apr 11, 2002
filing date -
Oct 9, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for cleaning a contact area of a metal line wherein a nitride barrier layer is formed on a sidewall of an insulating interlayer within the contact area by introducing the nitrogen-based radical to the contact area, whereby it is possible to prevent a low dielectric insulating interlayer from becoming deteriorated by the redeposition of metal ions and by hydrogen radical activated during reactive cleaning, thereby maintaining a low dielectric characteristic of the insulating interlayer. The method includes the steps of sequentially depositing the metal line and an insulating interlayer on a substrate, forming the contact area by selectively removing the insulating interlayer, forming a nitride barrier layer on the sidewalls of the insulating interlayer by introducing the nitrogen-based radical into the contact area, removing residue from the surface of the metal line by sputtering Ar.sup.+ ions into the contact area, removing a metal oxide layer formed at the exposed metal line by reactive cleaning of the contact area, and removing byproducts formed at the sidewall of the insulating interlayer by performing a plasma surface process applying the nitrogen-based radical to the contact area.
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