Method of determining the charge carrier concentration in materials, notably semiconductors
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United States of America Patent
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Feb 10, 2004
Grant Date -
N/A
app pub date -
Oct 12, 2000
filing date -
Oct 15, 1999
priority date (Note) -
Expired
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Abstract
A method for determining the concentration of charge carriers in doped specimens, notably semiconductors, wherein the beam produced by an electron source is made to interact with the specimen, an energy spectrum of the electrons in the beam being derived by means of an energy spectrometer. Plasmon frequencies in the specimen are derived by analysis of the spectrum and the concentration of charge carriers in the doped material is derived from said plasmon frequencies.
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