Method for minimizing variation in etch rate of semiconductor wafer caused by variation in mask pattern density
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United States of America Patent
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Feb 3, 2004
Grant Date -
Jan 16, 2003
app pub date -
Jan 9, 2002
filing date -
Jun 9, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method for minimizing a variation in an etch rate of a semiconductor wafer caused by a variation in a mask pattern density, the method includes determining a reference amount of an etch gas for a reference mask pattern density, obtaining an optimized amount of the etch gas for a mask pattern density different from the reference mask pattern density, wherein the optimized amount is obtained by the following equation: ##EQU1## and the mask pattern density is a value of dividing a mask pattern area by an overall semiconductor wafer area, and applying the optimized amount of the etch gas in an etching process of the semiconductor wafer.
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