Magnetic memory cell and method for assigning tunable writing currents
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United States of America Patent
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Jan 27, 2004
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N/A
app pub date -
Jun 26, 2002
filing date -
Jun 26, 2002
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Abstract
A circuit is provided herein, which is adapted to supply different current magnitudes along opposing directions of a conductive line. Such a circuit may be particularly beneficial in compensating for the effects of unintentional magnetic coupling within MRAM devices. In addition, a method is provided herein for configuring a device having a magnetic memory array, which receives a first current magnitude along one direction and a substantially different current magnitude along an opposite direction of the magnetic memory array. Furthermore, a method is provided herein which assigns tunable current magnitudes for write operations along conductive lines of a memory circuit. Such tunable writing currents advantageously increase the write selectivity of the memory circuit. More specifically, the tunable writing currents compensate for ferromagnetic and antiferromagnetic coupling within magnetic memory cells caused by uneven surface topology and non-zero total magnetic moments, respectively.
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