Semiconductor light emitting device and semiconductor laser
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United States of America Patent
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Jan 20, 2004
Grant Date -
Mar 7, 2002
app pub date -
Jul 18, 2001
filing date -
Jul 18, 2000
priority date (Note) -
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Abstract
When a laminated semiconductor portion of nitride based compound semiconductor is formed so as to constitute a portion forming a light emitting layer forming portion on a sapphire substrate, the sapphire substrate has an off orientation angle having a tilt relative to an A axis or a M axis in such a way that 0.2.degree..ltoreq..theta.={.theta..sub.a.sup.2 +.theta..sub.m.sup.2 }.sup.1/2.ltoreq.0.3.degree., wherein 0.degree..ltoreq..theta..sub.a.ltoreq.0.3.degree., 0.degree..ltoreq..theta..sub.m.ltoreq.0.3.degree., when taking the angle tilted relative to the A axis as .theta..sub.a and to the M axis as .theta..sub.m, and the foregoing nitride based compound semiconductor layers are laminated onto the surface of the off-oriented C plane. Therefore, it is possible to attain a semiconductor light emitting device having the superior characteristic of light emitting by growing the nitride based compound semiconductor on a sapphire substrate with the degree of flatness high and furthermore to attain a semiconductor laser of a small threshold current by forming a cleavage surface finely while improving the degree of flatness by off-orienting a sapphire substrate.
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