Method of hot switching a plasma tuner
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United States of America Patent
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Jan 13, 2004
Grant Date -
N/A
app pub date -
Aug 17, 2000
filing date -
Aug 17, 2000
priority date (Note) -
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Abstract
The present hot switching method and impedance matching circuit extends the tuning range of matching circuits to include increased power levels. The hot switching method and circuit includes coupling a controlled impedance network between an RF generator output and a plasma chamber input for matching impedances. The controlled impedance network includes an RF switch for switching a predetermined impedance. A device performance characteristic of the RF switch is determined. RF power is applied from the RF generator through the controlled impedance network to the plasma chamber. A signal characteristic of the impedance match is measured. The RF switch is controlled based upon the measured signal characteristic such that the impedance match is driven towards a predetermined matching range. The RF switch is switched any speed based upon the device performance characteristic.
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