Lateral components in power semiconductor devices

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United States of America Patent

PATENT NO 6674148
SERIAL NO

09428013

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.

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Patent Owner(s)

Patent OwnerAddress
SGS-THOMSON MICROELECTRONICS S AGINTILLY

International Classification(s)

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  • 1999 Application Filing Year
  • H01L Class
  • 9552 Applications Filed
  • 6055 Patents Issued To-Date
  • 63.39 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances19992000200120022003200420052006200720082009201020110255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bernier, Eric Mettray, FR 74 1131
Simonnet, Jean-Michel Tours, FR 19 47

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  • H01L Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges43114369735018712260482631176601 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050100150200250300350400450500550600650700750800850900950100010501100115012001250

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