Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Jan 6, 2004
Grant Date -
Apr 10, 2003
app pub date -
Sep 23, 2002
filing date -
Jun 1, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
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