Chemical plasma cathode
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United States of America Patent
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Jan 6, 2004
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N/A
app pub date -
Jan 3, 2003
filing date -
Dec 7, 2000
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Abstract
A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.
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