High resistivity silicon wafer having electrically inactive dopant and method of producing same
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United States of America Patent
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Jan 6, 2004
Grant Date -
Jun 12, 2003
app pub date -
Dec 6, 2001
filing date -
Dec 6, 2001
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Abstract
An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 .OMEGA..multidot.cm or more, preferably 1000 .OMEGA..multidot.cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.
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