Nonvolatile semiconductor memory having page mode with a plurality of banks
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United States of America Patent
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Dec 30, 2003
Grant Date -
Jun 19, 2003
app pub date -
Aug 30, 2002
filing date -
Aug 31, 2001
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory includes first and second nonvolatile memory banks, a data-line for read, a data-line for program and verify, a sense amplifier for read, a sense amplifier for program and verify, and a program circuit. The data-lines are arranged in a region between the first and second nonvolatile memory banks, and selectively connected to the bit-lines of the first and second nonvolatile memory banks. The sense amplifier for read is connected to the data-line for read. The sense amplifier for program and verify and the program circuit are connected to the data-line for program and verify.
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