High resistivity silicon wafer produced by a controlled pull rate czochralski method
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United States of America Patent
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Dec 30, 2003
Grant Date -
Jun 12, 2003
app pub date -
Dec 6, 2001
filing date -
Dec 6, 2001
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Abstract
A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 .OMEGA..multidot.cm or more, preferably 1000 .OMEGA..multidot.cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1.times.10.sup.-5 cm.sup.2 /s.multidot.K to about 5.times.10.sup.-5 cm.sup.2 /s.multidot.K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.
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