Plasma processing apparatus
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United States of America Patent
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Dec 16, 2003
Grant Date -
Aug 28, 2003
app pub date -
Feb 27, 2002
filing date -
Feb 27, 2002
priority date (Note) -
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Abstract
There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.
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