Semiconductor impurity concentration testing apparatus and semiconductor impurity concentration testing method
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United States of America Patent
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Dec 9, 2003
Grant Date -
Jan 17, 2002
app pub date -
Jun 18, 2001
filing date -
Jun 20, 2000
priority date (Note) -
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Abstract
A semiconductor impurity concentration testing apparatus includes a terahertz pulse light source that irradiates terahertz pulse light on a semiconductor material, a light detector that detects transmitted pulse light having been transmitted through the semiconductor material, a measurement device that ascertains a spectral transmittance based upon a time-series waveform of the electric field intensity of the transmitted pulse light and an arithmetic operation unit that calculates an impurity concentration in the semiconductor material based upon the spectral transmittance. By adopting such a structure, it becomes possible to measure and test the impurity concentration over the entire semiconductor material in a simple manner and to reproduce an image of the impurity distribution.
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