Laser device based on silicon nanostructures
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United States of America Patent
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Dec 9, 2003
Grant Date -
Nov 7, 2002
app pub date -
Nov 21, 2001
filing date -
May 7, 2001
priority date (Note) -
Expired
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Abstract
A silicon-based light-emitting device is described and comprises an active region, an excitation system which can bring about a condition of inversion of the population of carriers within the active region, and semi-reflective elements which can define a resonant optical structure in which the active region is inserted so as to bring about stimulated emission of coherent light. The active region comprises silicon nanostructures immersed in a silicon-dioxide-based dielectric matrix.
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