Method for anodically bonding glass and semiconducting material together
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United States of America Patent
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Dec 9, 2003
Grant Date -
May 15, 2003
app pub date -
May 4, 2001
filing date -
May 4, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100.degree. C. and 500.degree. C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
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