Non-contacting deposition control of chalcopyrite thin films
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United States of America Patent
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Dec 9, 2003
Grant Date -
May 1, 2003
app pub date -
Oct 29, 2001
filing date -
Oct 29, 2001
priority date (Note) -
Expired
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Abstract
Chalcopyrite semiconductors, such as thin films of copper-indium-diselenide (CuInSe.sub.2), copper-gallium-diselenide (CuGaSe.sub.2), and Cu(In.sub.x,Ga.sub.1-x)Se.sub.2, all of which are sometimes generically referred to as CIGS, have become the subject of considerable interest and study for semiconductor devices in recent years. They are of particular interest for photovoltaic device or solar cell absorber applications. The quality of Cu(In,Ga)Se.sub.2 thin films, as an example of chalcopyrite films, is controlled by making spectrophotometric measurements of light reflected from the film surface. This permits the result of non-contacting measurements of films in a continuous production environment to be fed back to adjust the production conditions in order to improve or maintain the quality of subsequently produced film.
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