Surface-emitting semiconductor laser
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Dec 2, 2003
Grant Date -
Jun 13, 2002
app pub date -
Dec 13, 2000
filing date -
Dec 13, 2000
priority date (Note) -
Expired
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Abstract
A laser suitable for intra-cavity laser absorption spectroscopy and for telecommunication system comprises a Bragg mirror, a multiple quantum well active region and an anti-reflective coating together with a second mirror spaced from the coating to define an external cavity, the free spectral range of the sub-cavity defined by the coating and the active region being less than two times the bandwidth of the coating and the bandwidth of the Bragg mirror being at least as great as the free spectral range of the sub-cavity.
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