Semiconductor memory device for storing multivalued data
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United States of America Patent
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Dec 2, 2003
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N/A
app pub date -
Feb 4, 2003
filing date -
Nov 29, 2002
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Abstract
Before the next data is stored into a first memory cell in which i bits of data have been stored, i or less bits of data are written into cells adjacent to the first memory cell beforehand. The writing of i or less bits of data is done using a threshold voltage lower than the original threshold voltage (or the actual threshold voltage in storing i bits of data). After the adjacent cells have been written into, writing is done to raise the threshold voltage of the first memory cell.
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