Application of high spin polarization materials in two terminal non-volatile bistable memory devices
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United States of America Patent
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Dec 2, 2003
Grant Date -
N/A
app pub date -
Apr 30, 2002
filing date -
May 11, 2001
priority date (Note) -
Expired
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Abstract
Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO.sub.2 /Cr.sub.2 O.sub.3 /CrO.sub.2 sequence but typically have multiple CrO.sub.2 /Cr.sub.2 O.sub.3 /CrO.sub.2 sequences in series.
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