Process for electron beam lithography, and electron-optical lithography system
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United States of America Patent
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Dec 2, 2003
Grant Date -
Apr 18, 2002
app pub date -
Jul 16, 2001
filing date -
Jul 14, 2000
priority date (Note) -
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Abstract
The present invention relates to a method for electron beam lithography that consists of a combination of electron beam projection lithography and electron beam writing. In a first step, the exposure of the substrate takes place by imaging of a mask. In a second step, structures not present on the mask are written on the substrate by electron beam writing. The invention furthermore relates to an electron-optical lithography system that can be used both for projection lithography and for electron beam writing. The system has a projective system by means of which a mask plane can be imaged on a reduced scale in a substrate plane. The system furthermore has an electron-optical illumination system by means of which selectively either a large field in the mask plane can be illuminated or the electron beam can be focused in the mask plane or can be shaped to a desired beam profile.
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