Dielectric layer for a semiconductor device and method of producing the same
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United States of America Patent
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Nov 25, 2003
Grant Date -
May 9, 2002
app pub date -
Aug 31, 2001
filing date -
Feb 26, 1999
priority date (Note) -
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Abstract
A semiconductor device includes a low dielectric constant insulating film exhibiting an Si--H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity. A method of producing such a semiconductor device includes depositing a dielectric layer over a substrate and treating the dielectric layer in a hydrogen containing plasma such that the dielectric layer exhibits an Si--H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity.
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