Structure and method for doping of III-V compounds
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United States of America Patent
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Nov 25, 2003
Grant Date -
Jun 27, 2002
app pub date -
Dec 21, 2000
filing date -
Dec 21, 2000
priority date (Note) -
Expired
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Abstract
A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V compound. The structure does not facilitate the introduction of impurities into the III-V compound during the diffusion of the dopant.
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