Fabrication method of optical device having current blocking layer of buried ridge structure
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United States of America Patent
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Nov 25, 2003
Grant Date -
Oct 10, 2002
app pub date -
Apr 3, 2002
filing date -
Apr 6, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An optical device having a current blocking layer of a buried ridge structure and a fabrication method thereof are disclosed. This invention reduces a leakage current between active layer and ion implant layer in buried ridge structure. To minimize leakage current, a P-N-P current blocking layer and an ion implanting current blocking layer are combined. An optical device of the present invention includes: active layers of a mesa structure in a predetermined region on a substrate; a first current blocking layer of a P-N-P structure, which is placed to cover the mesa structure; and a second current blocking layer of a buried ridge structure, which is placed to surround the environs of the first current blocking layer.
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