Separate lateral confinement quantum well laser
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United States of America Patent
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Nov 18, 2003
Grant Date -
Jan 9, 2003
app pub date -
Jun 29, 2001
filing date -
Jun 29, 2001
priority date (Note) -
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Abstract
A semiconductor quantum well laser having separate lateral confinement of injected carriers and the optical mode. A ridge waveguide is used to confine the optical mode. A buried heterostructure confines injected carriers. A preferred embodiment laser of the invention is a layered semiconductor structure including optical confinement layers. A buried heterojunction quantum well within the optical confinement layers is dimensioned and arranged to confine injected carriers during laser operation. A ridge waveguide outside the optical confinement layers is dimensioned and arranged with respect to the buried heterojunction to confine an optical mode during laser operation. An index step created by the buried heterojunction is substantially removed from the optical mode.
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