Method of etching a substrate
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United States of America Patent
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Nov 18, 2003
Grant Date -
Oct 3, 2002
app pub date -
Mar 27, 2002
filing date -
Mar 30, 2001
priority date (Note) -
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Abstract
This invention relates to a method of etching a substrate in a chamber on an electrostatic chuck, which defines a gas cooling path at the substrate/chuck interface. The method includes electrostatically clamping the substrate on the chuck with gas in the gas path being at a first pressure; etching the substrate at a first power; detecting the end point for the etc; reducing the gas pressure to a second pressure at which the substrate floats on a gas; and over etching the wafer at a second power, which is lower than the first power.
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