Grating-outcoupled surface-emitting lasers using quantum wells with thickness and composition variation
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United States of America Patent
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Nov 11, 2003
Grant Date -
Jan 17, 2002
app pub date -
Apr 27, 2001
filing date -
Apr 28, 2000
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Abstract
A laser diode system that has two distributed Bragg reflector reflectors at either end and an outcoupling aperture between the reflectors. The quantum wells in the active region are thicker in the gain region than in other parts of the device, increasing efficiency and lowering threshold current.
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