Method for modifying the doping level of a silicon layer
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United States of America Patent
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Nov 11, 2003
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N/A
app pub date -
Sep 12, 1996
filing date -
Sep 28, 1995
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Abstract
A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined temperature. The method may be applied to the fabrication of an adjustable resistor or a MOS transistor having an adjustable threshold.
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