Rational directional solidification crystal growth system and method
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United States of America Patent
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Nov 11, 2003
Grant Date -
May 1, 2003
app pub date -
Jan 3, 2002
filing date -
Oct 30, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A rotational directional solidification crystal growth system includes a vertical furnace, a crucible, and a rotate support device. The vertical furnace contains a high-temperature portion and a low-temperature portion. The crucible has a seed well and a growth region. The seed well and the growth region contain a seed crystal and raw material, respectively. The crucible moves from the high-temperature portion of the furnace to the low-temperature portion of the furnace or the thermal profile moves related to a stationary crucible to proceed the crystal growth. The rotation support device supports and rotates the crucible, and the tangent velocity of the rotated crucible is no less than about 5.pi./3 cm/s.
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