Non-oxidizing spacer densification method for manufacturing semiconductor devices
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United States of America Patent
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Nov 4, 2003
Grant Date -
Oct 30, 2003
app pub date -
Jul 30, 2001
filing date -
Jul 30, 2001
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Abstract
Non-oxidizing spacer densification method for producing semiconductor devices, such as MOSFET devices, and that may be implemented during semiconductor fabrication with little or substantially no polycide adhesion loss experienced during spacer densification. The method may be implemented to provide good polycide adhesion characteristics with reduced process complexity over conventional methods by eliminating the need for additional process steps such as metal silicide encapsulation or polysilicon surface treatments.
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