Contact on a P-type region
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United States of America Patent
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Oct 14, 2003
Grant Date -
N/A
app pub date -
May 22, 1998
filing date -
May 30, 1997
priority date (Note) -
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Abstract
The present invention relates to a contacting structure on a lightly-doped P-type region of a semiconductor component, this P-type region being positively biased during the on-state operation of said component, including, on the P region a layer of a platinum silicide, or of a metal silicide having with the P-type silicon a barrier height lower than or equal to that of the platinum silicide.
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