Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
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United States of America Patent
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Oct 14, 2003
Grant Date -
N/A
app pub date -
Jun 23, 2000
filing date -
Jul 6, 1999
priority date (Note) -
Expired
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Abstract
In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by surface roughening, an impurity is introduced into the polycrystalline silicon film by vapor phase diffusion in order to reduce the resistance of the lower electrode.
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