Optimized silicon wafer gettering for advanced semiconductor devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 14, 2003
Issued Date -
N/A
app pub date -
Jan 11, 2001
filing date -
Jul 14, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of manufacturing a silicon wafer with robust gettering sites and a low concentration of surface defects is provided. The method comprises adding polycrystalline silicon to a crucible; adding a nitrogen-containing dopant to the crucible; heating the crucible to form a nitrogen-doped silicon melt; pulling a silicon crystal from the melt according to the Czochralski technique; forming a silicon wafer from the silicon crystal, wherein the silicon wafer includes a front surface and a back surface; placing the silicon wafer into a deposition chamber; heating the wafer; and simultaneously depositing an epitaxial first film of a desired compound onto the front surface of the wafer and a second film of the desired compound onto the back surface of the wafer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully