Importance

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Abstract

The present invention provides a semiconductor device (e.g., MOSFET) having a channel above the surface of the wafer containing a well and a junction. The elevated channel may be selectively epitaxially grown and enables higher mobility, thereby enabling a higher current flow at a lower voltage through the device. The process flow of the invention provides for the implantation and thermal processing of the wells and junctions prior to the growth of a channel or the deposition of a gate stack. By implanting and annealing the wells and junctions prior to the formation of the channel and gate, a greater variety of materials are available for the channel and gate, e.g., undoped materials may be used to form the channel, metal oxides and similar materials with large dielectrics may be used to form a gate stack, and barrier metals and pure metals (copper, tungsten, etc.) may be used as gate electrodes.

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First Claim