Methods and apparatus for forming a film on a substrate
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United States of America Patent
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Sep 30, 2003
Grant Date -
Oct 18, 2001
app pub date -
Jan 17, 2001
filing date -
Jan 19, 2000
priority date (Note) -
Expired
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Abstract
This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k.ltoreq.3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
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